logo

您所在位置网站首页 > 海量文档  > 理工科 > 工学

FDC2214中文数据手册.pdf 60页

本文档一共被下载: ,您可全文免费在线阅读后下载本文档。

  • 支付并下载
  • 收藏该文档
  • 百度一下本文档
  • 修改文档简介
全屏预览

下载提示

1.本站不保证该用户上传的文档完整性,不预览、不比对内容而直接下载产生的反悔问题本站不予受理。
2.该文档所得收入(下载+内容+预览三)归上传者、原创者。
3.登录后可充值,立即自动返金币,充值渠道很便利
同意并开始全文预览
《FDC2214中文数据手册.pdf》
Product Order Technical Tools & Support & Folder Now Documents Software Community FDC2212, FDC2214, FDC2112, FDC2114 ZHCSDX2A – JUNE 2015– REVISED JUNE 2015 FDC2x1x 适用于接近传感和液位感测的抗EMI 28/12 位电容数字转换器IC 1 特性 3 说明 • 抗电磁干扰(EMI) 架构 电容式传感是一种低功耗、低成本且高分辨率的非接触 • 最高输出速率(每条有源通道): 式感测技术, 适用于 从接近检测和手势识别到远程液 位感测领域的各项应用。电容式传感系统中的传感器可 – 13.3ksps (FDC2112,FDC2114) 以采用任意金属或导体,因此可实现高度灵活的低成本 – 4.08ksps (FDC2212,FDC2214) 系统设计。 • 最大输入电容:250nF (10kHz 频率,1mH 电感 电容式传感应用灵敏度的主要限制因素在于 传感器的 时) 噪声敏感性。FDC2x1x 采用创新型抗 EMI 架构,即使 • 传感器激励频率:10kHz 至 10MHz 在高噪声环境中也能维持性能不变。 • 通道数:2 或4 FDC2x1x 是面向电容式传感解决方案的抗噪声和 • 分辨率:高达28 位 EMI、高分辨率、高速、多通道电容数字转换器系列。 • 系统噪底:100sps 时为0.3fF 该系列器件采用基于窄带的创新型架构,可对噪声和干 扰进行高度抑制,同时在高速条件下提供高分辨率。该 • 电源电压:2.7V 至3.6V 系列器件支持宽激励频率范围,可为系统设计带来灵活 • 功耗:2.1mA (有源) 性。宽频率范围对于导电液体(例如清洁剂、肥皂液和 油墨)感测的可靠性特别有用。 • 低功耗休眠模式:35μA • 关断电流:200nA 器件信息(1) 2 器件型号 封装 封装尺寸(标称值) • 接口:I C FDC2112,FDC221 WSON (DNT 12) 4.00mm x 4.00mm • 温度范围:-40°C 至+125°C 2 FDC2114,FDC221 WQFN (RGH 16) 4.00mm x 4.00mm 4 (1) 要了解所有可用封装,请见数据表末尾的可订购产品附录。 2 应用 • 接近传感器 • 手势识别 • 液位传感器(包括清洁剂、肥皂液和油墨等导电液 体) • 碰撞避免 • 雨、雾、冰、雪传感器 • 汽车门及尾门一脚踢开传感器 • 材料尺寸检测 简化电路原理图 3.3 V 3.3 V FDC2114 / FDC2214 VDD 40 MHz CLKIN VDD 0.1 µF 1 µF GND Int. Osc. IN0A Resonant SD GPIO L C IN0B circuit driver INTB GPIO MCU Cap 3.3 V Sensor 0 Core GND ADDR IN3A 2 Resonant 2 SDA I C I C L C IN3B circuit driver SCL peripheral Cap Sensor 3 Copyright © 2016, Texas Instruments Incorporated An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. English Data Sheet: SNOSCZ5 FDC2212, FDC2214, FDC2112, FDC2114 ZHCSDX2A – JUNE 2015 – REVISED JUNE 2015 目录 1 特性 1 9.3 Feature Description 12 2 应用 1 9.4 Device Functional Modes 21 3 说明 1 9.5 Programming 21 4 修订历史记录2 9.6 Register Maps 22 5 说明 (续)3 10 Application and Implementation 39 6 Device Comparison Table3 10.1 Application Information 39 7 Pin Configuration and Functions 4 10.2 Typical Application 40 8 Specifications 5 10.3 Do's and Don'ts 46 8.1 Absolute Maximum Ratings 5 11 Power Supply Recommendations 46 8.2 ESD Ratings 5 12 Layout 46 8.3 Recommended Operating Conditions 5 12.1 Layout Guidelines 46 8.4 Thermal Information 5 12.2 Layout Example46 8.5 Electrical Characteristics 6 13 器件和文档支持 51 8.6 Timing Requirements 7 13.1 器件支持51 8.7 Switching Characteristics - I2C 8 13.2 相关链接51 8.8 Typical Characteristics 9 13.3 社区资源51 9 Detailed Description 11 13.4 商标51 9.1 Overview 11 13.5 静电放电警告51 9.2 Functional Block Diagrams 11 13.6 Glossary 51 14 机械、封装和可订购信息 51 4 修订历史记录 Changes from Original (June 2015) to Revision A Page • 已添加完整数据表。 1 2 版权© 2015, Texas Instruments Incorporated FDC2212, FDC2214, FDC2112, FDC2114 ZHCSDX2A – JUNE 2015– REVISED JUNE 2015 5 说明 (续) FDC221x 经过优化,分辨率高达28 位,而FDC211x 的采样速率高达13.3ksps,便于实现使用快速移动目标的 应用。250nF 超大最高输入电容支持使用远程传感器并跟踪环境随时间、温度和湿度的变化情况。 FDC2x1x 系列器件面向接近感测和液位感测应用,适用于所有液体类型。如果非导电液位感测应用存在干扰 (例如人手),建议使用集成有源屏蔽驱动器的FDC1004。 6 设备比较表 PART NUMBER RESOLUTION CHANNELS PACKAGE FDC2112 12 bit 2 WSON-12 FDC2114 12 bit 4 WQFN-16 FDC2212 28 bit 2 WSON-12 FDC2214 28 bit 4 WQFN-16 Copyright © 2015, Texas Instruments Incorporated 3 FDC2212, FDC2214, FDC2112, FDC2114 ZHCSDX2A – JUNE 2015 – REVISED JUNE 2015 7 引脚配置和功能 FDC2112/FDC2212 WSON DNT-12 Top View SCL 1 12 IN1B SDA 2 11 IN1A CLKIN 3 10 IN0B DAP ADDR 4 9 IN0A INTB 5 8 GND SD 6 7 VDD FDC2114/FDC2214 WQFN RGH-16 Top View B A B A 3 3 2 2 N N N N I I I I 6 5 4 3 1 1 1 1 SCL 1 12 IN1B SDA 2 11 IN1A DAP CLKIN 3 10 IN0B ADDR 4 9 IN0A 5 6 7 8 B D D D T S D N N V G I Pin Functions PIN TYPE(1) DESCRIPTION NAME NO. SCL 1 I I2C Clock input SDA 2 I/O I2C Data input/output CLKIN 3 I 主时钟输入。 如果选择内部振荡器,则将此引脚连接到GND ADDR 4 I I2C地址选择引脚:当ADDR = L时,I2C地址= 0x2A ,当ADDR = H时,I2C地址= 0x2B。 INTB 5 O 可配置的中断输出引脚 SD 6 I Shutdown input VDD 7 P Power Supply GND 8 G Ground IN0A 9 A 电容传感器输入0 IN0B 10 A Capacitive sensor input 0 IN1A 11 A Capacitive sensor input 1 IN1B 12 A Capacitive sensor input 1 IN2A 13 A Capacitive sensor input 2 (FDC2114 / FDC2214 only) IN2B 14 A Capacitive sensor input 2 (FDC2114 / FDC2214 only) (1) I = Input, O = Output, P=Power, G=Ground, A=Analog 4 Copyright © 2015, Texas Instruments Incorporated FDC2212, FDC2214, FDC2112, FDC2114 ZHCSDX2A – JUNE 2015– REVISED JUNE 2015 Pin Functions (continued) PIN TYPE(1) DESCRIPTION NAME NO. IN3A 15 A Capacitive sensor input 3 (FDC2114 / FDC2214 only) IN3B 16 A Capacitive sensor input 3 (FDC2114 / FDC2214 only) DAP(2) DAP N/A Connect to Ground (2) 裸露的芯片连接垫(DAP)与器件的GND引脚之间存在内部电气连接。 虽然DAP可以悬空,但为了获得最佳性能,DAP应连接到与器件 GND引脚相同的电位。请勿将DAP用作设备的主要接地。 器件GND引脚必须始终接地. 8 Specifications 8.1 绝对最大额定值 MIN MAX UNIT VDD Supply voltage range 5 V Vi Voltage on any pin –0.3 VDD + 0.3 V IA Input current on any INx pin –8 8 mA ID Input current on any digital pin –5 5 mA TJ Junction temperature –55 150 °C Tstg Storage temperature –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 8.2 ESD Ratings VALUE UNIT FDC2112 / FDC2212 in 12-pin WSON package Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V(ESD) Electrostatic discharge Charged-device model (CDM), per JEDEC specification JESD22- ±750 V C101(2) FDC2114 / FDC2214 in 16-pin WQFN package Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 V(ESD) Electrostatic discharge Charged-device model (CDM), per JEDEC specification JESD22- ±750 V C101(2) (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 8.3 Recommended Operating Conditions Unless otherwise specified, all limits ensured for TA = 25°C, VDD = 3.3 V MIN NOM MAX UNIT VDD Supply voltage 2.7 3.6 V TA Operating temperature –40 125 °C 8.4 Thermal Information FDC2112 / FDC2214 / FDC2212 FDC2214 THERMAL METRIC(1) UNIT DNT (WSON) RGH (WQFN) 12 PINS 16 PINS RθJA Junction-to-ambient thermal resistance 50 38 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Copyright © 2015, Texas Instruments Incorporated 5 打开支付宝首页搜索“6992583” ,即可领红包 FDC2212, FDC2214, FDC2112, FDC2114 ZHCSDX2A – JUNE 2015 – REVISED JUNE 2015 8.5 Electrical Characteristics Unless otherwise specified, all limits ensured for TA = 25°C, VDD = 3.3 V(1) PARAMETER TEST CONDITIONS(2) MIN(3) TYP(4) MAX(3) UNIT POWER VDD Supply voltage TA = –40°C to +125°C 2.7 3.6 V IDD Supply durrent (not including CLKIN = 10MHz(6) 2.1 mA sensor current)(5) IDDSL Sleep mode supply current(5) 35 60 µA ISD Shutdown mode supply current (5) 0.2 1 µA CAPACITIVE SENSOR CSENSORMAX Maximum sensor capacitance 1mH inductor, 10kHz oscillation 250 nF CIN Sensor pin parasitic capacitance 4 pF NBITS Number of bits FDC2112, FDC2114 12 bits RCOUNT ≥ 0x0400 FDC2212, FDC2214 28 bits RCOUNT = 0xFFFF fCS Maximum channel sample rate FDC2112, FDC2114 single active channel continuous 13.3 kSPS conversion, SCL = 400 kHz FDC2212, FDC2214 single active channel continuous 4.08 kSPS conversion, SCL= 400 kHz EXCITATION fSENSOR Sensor excitation frequency TA = –40°C to +125°C 0.01 10 MHz VSENSORMIN Minimum sensor oscillation 1.2 V amplitude (pk)(7) VSENSORMAX Maximum sensor oscillation 1.8 V amplitude (pk) ISENSORMAX Sensor maximum current drive HIGH_CURRENT_DRV = b0 DRIVE_CURRENT_CH0 = 1.5 mA 0xF800 HIGH_CURRENT_DRV = b1 DRIVE_CURRENT_CH0 = 6 mA 0xF800 Channel 0 only MASTER CLOCK fCLKIN External master clock input TA = –40°C to +125°C 2 40 MHz frequency (CLKIN) CLKINDUTY_MIN External master clock minimum 40% acceptable duty cycle (CLKIN) CLKINDUTY_MAX External master clock maximum 60% acceptable duty cycle (CLKIN) VCLKIN_LO CLKIN low voltage threshold 0.3*VDD V (1) Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T = T . No guarantee of parametric performance is indicated in the electrical tables J A under conditions of internal self-heating where T > T . Absolute Maximum Ratings indicate junction temperature limits beyond which J A the device may be permanently degraded, either mechanically or electrically. (2) Register values are represented as either binary (b is the prefix to the digits), or hexadecimal (0x is the prefix to the digits). Decimal values have no prefix. (3) Limits are ensured by testing, design, or statistical analysis at 25°C. Limits over the operating temperature range are ensured through correlations using statistical quality control (SQC) method. (4) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material. (5) I2C read/write communication and pull-up resistors current through SCL, SDA not included. (6) Sensor capacitor: 1 layer, 20.9 x 13.9 mm, Bourns CMH322522-180KL sensor inductor with L=18µH and 33pF 1% COG/NP0 Target: Grounded aluminum plate (176 x 123 mm), Channel = Channel 0 (continuous mode) CLKIN = 40 MHz, CHx_FIN_SEL = b10, CHx_FREF_DIVIDER = b00 0000 0001 CH0_RCOUNT = 0xFFFF, SETTLECOUNT_CH0 = 0x0100, DRIVE_CURRENT_CH0 = 0x7800. (7) Lower VSENSORMIN oscillation amplitudes can be used, but will result in lower SNR. 6 Copyright © 2015, Texas Instruments Incorporated FDC2212, FDC2214, FDC2112, FDC2114 ZHCSDX2A – JUNE 2015– REVISED JUNE 2015 Electrical Characteristics (continued) Unless otherwise specified, all limits ensured for TA = 25°C, VDD = 3.3 V(1) PARAMETER TEST CONDITIONS(2) MIN(3) TYP(4) MAX(3) UNIT VCLKIN_HI CLKIN high voltage threshold 0.7*VDD V fINTCLK Internal master clock frequency 35 43.4 55 MHz range TCf_int_μ Internal master clock temperature coefficient mean – 13 ppm/°C 8.6 Timing Requirements MIN NOM MAX UNIT tSDWAKEUP Wake-up time from SD high-low transition to I2C readback 2 ms tSLEEPWAKEUP Wake-up time from sleep mode 0.05 ms tWD-TIMEOUT Sensor recovery time (after watchdog timeout) 5.2 ms I2C TIMING CHARACTERISTICS fSCL Clock frequency 10 400 kHz tLOW Clock low time 1.3 μs tHIGH Clock high time 0.6 μs Hold time (repeated) START condition: after this period, the first clock tHD;STA 0.6 μs pulse is generated tSU;STA Setup time for a repeated START condition 0.6 μs tHD;DAT Data hold time 0 μs tSU;DAT Data setup time 100 ns tSU;STO Setup time for STOP condition 0.6 μs tBUF Bus free time between a STOP and START condition 1.3 μs tVD;DAT Data valid time 0.9 μs tVD;ACK Data valid acknowledge time 0.9 μs tSP Pulse width of spikes that must be suppressed by the input filter (1) 50 ns (1) This parameter is specified by design and/or characterization and is not tested in production. SDA tBUF tf tLOW tHD;STA tr tr tf tSP SCL tHD;STA tSU;STA tSU;STO tHIGH tHD;DAT tSU;DAT START STOP START REPEATED START Figure 1. I2C Timing Copyright © 2015, Texas Instruments Incorporated
下载地址
文档纠错    收藏文档    下载帮助
特别说明: 下载前务必先预览,自己验证一下是不是你要下载的文档。
  • 上传作者 逝年(上传创作收益人)
  • 发布时间:2018-09-05
  • 需要金币80(10金币=人民币1元)
  • 浏览人气
  • 下载次数
  • 收藏次数
  • 文件大小:2.47 MB
下载过该文档的会员

这个文档不错

33.3%(1)

文档有待改进

66.7%(2)
各种工科资料
你可能关注的文档:


发表评论

请自觉遵守互联网相关的政策法规,严禁发布色情、暴力、反动的言论。
用户名: 验证码: 点击我更换图片

“原创力文档”前称为“文档投稿赚钱网”,本站为“文档C2C交易模式”,即用户上传的文档直接卖给(下载)用户,本站只是中间服务平台,本站所有文档下载所得的收益归上传人(含作者)所有【成交的100%(原创)】。原创力文档是网络服务平台方,若您的权利被侵害,侵权客服QQ:3005833200 电话:19940600175 欢迎举报,上传者QQ群:784321556